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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. KTC3543T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES Adoption of MBIT Processes. High Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall-sized Package Permitting Applied sets to be made small and slim. High Allowable Power Dissipation. Complementary to KTA1543T. C L G High-Speed Switching. 1 E F G H I J K L H J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 ) RATING 40 30 6 5 7 1.2 0.9 150 -55 150 UNIT V V V A A W J 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=30V, IE=0 VEB=4V, IC=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 IC=2.5A, IB=50mA IC=2.5A, IB=50mA VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB 50 VR 100F 470F VCC =12V RL MIN. 40 30 6 200 - OUTPUT Storage Time tstg Fall Time tf V BE =-5V 20IB1=-20IB2=IC =2.5A 2001. 6. 29 Revision No : 0 I TSM HJ TYP. 110 0.82 290 40 30 MAX. 0.1 0.1 165 1.2 560 MHz pF UNIT A A V V V mV V - 320 - nS - 14 - 1/3 KTC3543T I C - V CE 5 A h FE - I C 40m A 30mA COLLECTOR CURRENT I C (A) 10 DC CURRENT GAIN h FE 50 0m mA 1K 500 300 Ta=75 C Ta=25 C Ta=-25 C 4 3 2 1 0 0 60mA 70mA 80mA 90mA 20mA 10mA 100 50 30 VCE =2V IB=0mA 100 200 300 400 500 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR-EMITTER VOLTAGE VCE (mV) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 0.01 75 Ta= 25 Ta= VCE(sat) - I C I C /I B =20 1K 500 300 I C /I B =50 C C -25 Ta= C 100 50 30 75 Ta= 25 Ta= C 25 =Ta C C 0.03 0.1 0.3 1 3 10 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C 10K BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 5K 3K COLLECTOR CURRENT I C (A) I C /I B =50 I C - V BE 1.0 0.9 0.8 0.7 0.6 C VCE =2V 500 300 Ta=25 C Ta=75 C 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 100 0.01 0.03 0.1 0.3 1 3 10 0.6 0.7 Ta=-25 Ta=75 Ta=25 1K Ta=-25 C 0.5 C C 0.8 0.9 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) 2001. 6. 29 Revision No : 0 2/3 KTC3543T fT -IC TRANSIION FREQUENCY f T (MHz) 1K 500 300 COLLECTOR OUTPUT CAPACITANCE C ob (pF) VCE =10V C ob - V CB 1K 500 300 f=1MHz 100 50 30 100 50 30 10 0.01 0.03 0.1 0.3 1 3 10 1 3 5 10 30 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA 10 COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 IC MAX.(PULSED) I C MAX (CONTINUOUS) DC OP ER Pc - Ta COLLECTOR POWER DISSIPATION PC (W) S* 0 S* 10 0 50 S* 1m 1.2 MOUNTED ON A 10 m 10 S* 1.0 0.8 0.6 0.4 0.2 0 CERAMIC BOARD (600mm 2 0.8mm) 0m S* AT IO N * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 0.1 0.3 0.5 1 3 5 10 30 50 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 6. 29 Revision No : 0 3/3 |
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